| PART |
Description |
Maker |
| A3187ELT A3187EUA A3187LLT A3187LT UGN3175SUA A318 |
HALL-EFFECT LATCHES FOR HIGH-TEMPERATURE OPERATION 霍尔效应锁存器的高温作业
SENSOR IC 5CH 5V 5MA SGL 28-SSOP
Hall-Effect Latch For High-Temperature Operation(工作于高温的霍尔效应锁存
Hall-effect latche for high-temperature operation
|
Allegro MicroSystems, Inc.
ALLEGRO[Allegro MicroSystems]
|
| XT36C |
Surface Mount Microprocessor Crystals 10.0MHz - 64.0MHz, Withstands Solder and Reflow Techniques, Slimline Profile, Tape and Reel (Standard 1000 Pieces)
|
Vishay
|
| W0603HT-01-100R-G W0603HT-01-100R-J W1206HT-01-100 |
High Temperature TaNFilm㈢ Chip Resistors
High Temperature TaNFilm垄莽 Chip Resistors
High Temperature TaNFilm? Chip Resistors
High Temperature TaNFilmChip Resistors RESISTOR, METAL FILM, 0.1 W, 1 %, 100 ppm, 100 ohm, SURFACE MOUNT, 0805
High Temperature TaNFilmChip Resistors RESISTOR, METAL FILM, 0.0625 W, 5 %, 100 ppm, 100 ohm, SURFACE MOUNT, 0603
High Temperature TaNFilmChip Resistors RESISTOR, METAL FILM, 0.125 W, 2 %, 100 ppm, 100 ohm, SURFACE MOUNT, 1206
|
Welwyn Components Limited
TT Electronics / Welwyn
Welwyn Components, Ltd.
Welwyn Components Limit...
|
| 3197 A3197ELT A3197EU A3197LLT A3197LU A3196LLT A3 |
PROTECTED HIGH-TEMPERATURE OPEN-COLLECTOR HALL-EFFECT LATCH
PROTECTED, HIGH-TEMPERATURE, OPEN-COLLECTOR HALL-EFFECT LATCH
PROTECTED/ HIGH-TEMPERATURE/ OPEN-COLLECTOR HALL-EFFECT LATCH
Protected,High-Temperature,Hall-Effect Latch With Active Pull-Down(保护型，工作于高温，集电极开路霍尔效应锁存器)
IC SENSOR QWHEEL ROTARY 14TSSOP
Protected,High-Temperature,Hall-Effect Latch With Active Pull-Down(淇?????宸ヤ?浜??娓╋???????璺??灏??搴??瀛??)
Protected, high-temperature, hall-effect latch with active pull-down
|
ALLEGRO[Allegro MicroSystems]
Allegro MicroSystems, Inc.
|
| 1N4007G 1N4004G 1N4001G 1N4002G 1N4002 1N4006 1N40 |
Rectifiers(整流 1 A, 1000 V, SILICON, SIGNAL DIODE
(1N4001G - 1N4007G) Rectifiers(Rugged glass package / using a high temperature alloyed construction)
IC REG VOLT 4.8V 240MA SOT-23
Rectifiers(Rugged glass package/ using a high temperature alloyed construction)
Rectifiers(Rugged glass package, using a high temperature alloyed construction) 1 A, 50 V, SILICON, SIGNAL DIODE
Rectifiers(Rugged glass package, using a high temperature alloyed construction) 整流器（坚固的玻璃封装，采用高温合金建设
Rectifiers(Rugged glass package, using a high temperature alloyed construction) 1 A, 400 V, SILICON, SIGNAL DIODE
|
PHILIPS[Philips Semiconductors]
http://
NXP Semiconductors N.V.
|
| CXOMHT |
High Temperature/High Stability/Fast Start-up/High Shock
|
STATEK CORPORATION
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| NRT335M06 NRA155M25 NRB474K25 NRC473K16 NRC473K20 |
High-Temperature Durability 高温耐久
R Series Chip
High-Temperature Durability
|
Electronic Theatre Controls, Inc.
ETC
List of Unclassifed Manufacturers
http://
NEC
List of Unclassifed Man...
|
| EMC5.0F-LC EMC8.0F-LC EMC3.3F-LC EMC15F-LC EMC12F- |
Direct ProTek Replacement:EMC5.0F-LC
Two-Phase Multiphase Buck PWM Controller with Integrated MOSFET Drivers; Temperature Range: 0°C to 70°C; Package: 24-QFN
1.2A Integrated FETs, High Efficiency Synchronous Buck Regulator; Temperature Range: -40°C to 85°C; Package: 10-DFN
High Power LED Driver; Temperature Range: -25°C to 85°C; Package: 20-QFN
Automotive Grade TFT-LCD DC/DC with Integrated Amplifiers; Temperature Range: -25°C to 85°C; Package: 32-TQFP
直接太克替代：EMC3.3F，立法会
Two-Phase Multiphase Buck PWM Controller with Integrated MOSFET Drivers; Temperature Range: 0°C to 70°C; Package: 24-QFN 直接太克替代：EMC8.0F，立法会
|
New Japan Radio Co., Ltd.
|
| AM26LS32DCB AM26LS32JCTR AM26LS32/BEA AM26LS33/B2C |
Micropower Precision Shunt Voltage Reference; Package: SO; No of Pins: 8; Temperature Range: 0°C to 70°C
Wide Input Range, High Efficiency, Step-Down Switching Regulator; Package: PDIP; No of Pins: 8; Temperature Range: 0°C to 70°C
Low Noise, Rail-to-Rail Precision Op Amp; Package: PDIP; No of Pins: 8; Temperature Range: 0°C to 70°C
1.1MHz, 0.4V/us Over-The-Top Micropower, Rail-To-Rail Input and Output Op Amp; Package: SO; No of Pins: 8; Temperature Range: -40°C to 85°C
1.1MHz, 0.4V/us Over-The-Top Micropower, Rail-To-Rail Input and Output Op Amp; Package: PDIP; No of Pins: 8; Temperature Range: 0°C to 70°C
Positive High Voltage Hot Swap Controllers; Package: SO; No of Pins: 8; Temperature Range: -40°C to 85°C
Line Receiver 线路接收
|
接收
Advanced Micro Devices, Inc.
|
| TX7-705C-S-HP |
High precision SMD TCXO High frequency stability vs. temperature 0.10 ppm
|
QUARTZCOM the communications company
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